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В Bazar.BG от 24 август 2013г.
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108 обяви на потребителя
Type Designator: UTC50N06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 130 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 430 pF
Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm
Package: TO252